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Introduction to semiconductor laser diodes
Introduction to Semiconductor Laser Diodes
Since the mid-1980s, advances in semiconductor manufacturing technology combined with laser innovations have led to the development of semiconductor laser diodes. These devices offer higher peak power and lower energy consumption compared to traditional light sources. Their emission pulse width is also narrower, and they do not require temperature or optical compensation, giving them a significant advantage over conventional emitters. As a result, semiconductor laser diodes have become a key focus in the development of AlGaN-based devices for the middle ultraviolet band.
Ultraviolet radiation in this range has the highest excitation efficiency, making it highly valuable for various applications such as sterilization, sensing, and material processing. To make UV radiation sources more practical, researchers are focusing on two main directions. One is to significantly reduce the size and power consumption of existing ultraviolet lasers and their power supplies. The other is to develop light-emitting diodes (LEDs) that emit at 280 nm with power consumption below 10 mW, and laser diodes emitting at 340 nm with power consumption under 25 mW.
These advancements are paving the way for more compact, efficient, and versatile UV light sources, which could revolutionize industries ranging from healthcare to environmental monitoring. For more information on the latest developments in UV semiconductor technology, visit **http://**.