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Introduction to semiconductor laser diodes
Introduction to Semiconductor Laser Diodes
Since the mid-1980s, advances in semiconductor manufacturing technology combined with laser innovations have led to the development of semiconductor laser diodes. These devices offer higher peak power and lower energy consumption compared to traditional light sources. They also feature a narrow emission pulse width and do not require temperature or optical compensation, making them highly efficient and reliable. Due to these advantages, semiconductor laser diodes have become a key focus in the development of AlGaN-based emitters for the middle ultraviolet (UV) range. This UV band is particularly valuable because it provides the highest excitation efficiency and maintains high output performance.
To make ultraviolet radiation sources more practical, two main directions are being pursued in the development of semiconductor UV diodes. One approach is to significantly reduce the size and power consumption of current UV lasers and their power supplies, making them more compact and energy-efficient. Another direction involves developing light-emitting diodes (LEDs) that emit at 280 nm with power consumption below 10 mW, as well as laser diodes operating at 340 nm with power consumption under 25 mW. These advancements aim to expand the applications of UV sources in fields such as sterilization, sensing, and advanced materials processing.
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